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onsemi

FQL40N50F

MFR #FQL40N50F

FPN#FQL40N50F-FL

MFRonsemi

Part DescriptionN-Channel 500 V 40A (Tc) 460W (Tc) Through Hole TO-264-3
Datasheet
45459-Datasheet
Quote Onlymore info
Multiples of: 25more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQL40N50F
Packaging TypeTube
Packaging Quantity375
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance7500pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current40A (Tc)
Maximum Drain to Source Resistance110 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation460W (Tc)
Maximum Pulse Drain Current160A
Maximum Total Gate Charge200nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeHPM F2
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge78nC
Typical Gate to Source Charge37nC