(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FQD17P06TM
onsemi

FQD17P06TM

MFR #FQD17P06TM

FPN#FQD17P06TM-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 12A (Tc) TO-252-3 T/R
Datasheet
136981-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQD17P06
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance900pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current12A (Tc)
Maximum Drain to Source Resistance135 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 44W (Tc)
Maximum Pulse Drain Current48A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10nC
Typical Gate to Source Charge4.2nC