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FQA13N50C-F109
onsemi

FQA13N50C-F109

MFR #FQA13N50C-F109

FPN#FQA13N50C-F109-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 500V 13.5A (Tc) 218W (Tc) Through Hole, TO-3P-3
Datasheet
45419-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQA13N50C_F109
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2055pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13.5A (Tc)
Maximum Drain to Source Resistance480 mOhm @ 6.75A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation218W (Tc)
Maximum Pulse Drain Current54A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-3PN
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge18.5nC
Typical Gate to Source Charge7.5nC