
FJP5304DTU
MFR #FJP5304DTU
FPN#FJP5304DTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 400 V 4 A - 70 W Through Hole TO-220-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FJP5304D |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | N/A |
Life Cycle Status | Obsolete |
Maximum Collector Current | 4A |
Maximum Collector Emitter Breakdown Voltage | 400V |
Maximum Collector Emitter Saturation Voltage | 700mV @ 100mA, 500mA |
Maximum Cutoff Collector Current | 250mA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 70W |
Minimum DC Current Gain | 10 @ 10mA, 5V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | TO-220-3 |
Technology Type | SI |
Transistor Type | Single |