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FJA4213RTU
onsemi

FJA4213RTU

MFR #FJA4213RTU

FPN#FJA4213RTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
Datasheet
45057-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJA4213
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth30MHz
Life Cycle StatusObsolete
Maximum Collector Current17A
Maximum Collector Emitter Breakdown Voltage250V
Maximum Collector Emitter Saturation Voltage3V @ 800mA, 8A
Maximum Cutoff Collector Current5µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation130W
Minimum DC Current Gain55 @ 1A, 5V
Minimum Operating Temperature-50°C (TJ)
Package TypeTO-3PN
Technology TypeSI
Transistor TypeSingle