
onsemi
FGY120T65SPD
MFR #FGY120T65SPD
FPN#FGY120T65SPD-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650V 160A 714W Through Hole, TO-247-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGY120T65SPD |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-247-3 |
| Configuration | Single |
| Gate Charge | 187nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Maximum Collector Current | 160A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.05V @ 15V, 120A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 714W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Pulsed Collector Current | 360A |
| Reverse Recovery Time | 107ns |
| Switching Off Delay Time | 80ns |
| Switching Off Energy | 3.8mJ |
| Switching On Delay Time | 40ns |
| Switching On Energy | 6.6mJ |
| Technology Type | N/A |
