onsemi
FGA5065ADF
MFR #FGA5065ADF
FPN#FGA5065ADF-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650 V 100 A 268 W Through Hole TO-3PN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FGA5065ADF |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 72.2nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 100A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.2V @ 15V, 50A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 268W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-3PN |
| Pulsed Collector Current | 150A |
| Reverse Recovery Time | 31.8ns |
| Switching Off Delay Time | 62.4ns |
| Switching Off Energy | 309µJ |
| Switching On Delay Time | 20.8ns |
| Switching On Energy | 1.35mJ |
| Technology Type | N/A |