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Infineon

FF900R12IE4VBOSA1

MFR #FF900R12IE4VBOSA1

FPN#FF900R12IE4VBOSA1-FL

MFRInfineon

Part DescriptionIGBT Module Trench Field Stop 2-Independent 1200V 900A 5100W Chassis Mount, 10-Module
Datasheet
44929-Datasheet
Quote Onlymore info
Multiples of: 3more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFF900R12IE4V
Packaging TypeTray
Packaging Quantity3
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption TypeRoHS (2015/863), Unknown
Configuration2 Independent
IGBT TypeTrench Field Stop
Input Capacitance54000pF @ 25V
Input TypeStandard
Life Cycle StatusActive (NRND)
Maximum Collector Current900A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.1V @ 15V, 900A
Maximum Cutoff Collector Current5mA
Maximum Gate Emitter Voltage20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation5.1kW
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
NTC ThermistorYes
Package TypeN/A