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Infineon

FF600R12ME4AB11BOSA1

MFR #FF600R12ME4AB11BOSA1

FPN#FF600R12ME4AB11BOSA1-FL

MFRInfineon

Part DescriptionIGBT MODULE 1200V 3350W
Datasheet
44928-Datasheet
Quote Onlymore info
Multiples of: 6more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFF600R12ME4A_B11
Packaging TypeTray
Packaging Quantity6
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(c)-I, RoHS (2015/863)
Reach StatusCompliant
Configuration2 Independent
IGBT TypeTrench Field Stop
Input Capacitance37000pF @ 25V
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current950A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.1V @ 15V, 600A
Maximum Cutoff Collector Current3mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.35kW
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
NTC ThermistorYes
Package TypeAG-ECONOD