FDY102PZ
MFR #FDY102PZ
FPN#FDY102PZ-FL
MFRonsemi
Part DescriptionMOSFET P-CH 20V 830MA SC89-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDY102PZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Last Time Buy |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 135pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 830mA (Ta) |
| Maximum Drain to Source Resistance | 500 mOhm @ 830mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 625mW (Ta) |
| Maximum Pulse Drain Current | 1A |
| Maximum Total Gate Charge | 3.1nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | SOT-523F |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 600pC |
| Typical Gate to Source Charge | 300pC |