FDS9958
MFR #FDS9958
FPN#FDS9958-FL
MFRonsemi
Part DescriptionMOSFET 2 P-Channel 60V 2.9A 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS9958 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1020pF |
| Input Capacitance Test Voltage | 30V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 2.9A |
| Maximum Drain to Source Resistance | 105 mOhm @ 2.9A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 900mW |
| Maximum Pulse Drain Current | 12A |
| Maximum Total Gate Charge | 23nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3nC |
| Typical Gate to Source Charge | 2nC |