onsemi
FDS9400A
MFR #FDS9400A
FPN#FDS9400A-FL
MFRonsemi
Part DescriptionP-Channel 30 V 3.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS9400A |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Package Type | 8-SOIC |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 205pF |
| Input Capacitance Test Voltage | 15V |
| Maximum Continuous Drain Current | 3.4A (Ta) |
| Maximum Drain to Source Resistance | 130 mOhm @ 1A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.5W (Ta) |
| Maximum Pulse Drain Current | 10A |
| Maximum Total Gate Charge | 3.5nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 700pC |
| Typical Gate to Source Charge | 1nC |