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FDS8817NZ-G
onsemi

FDS8817NZ-G

MFR #FDS8817NZ-G

FPN#FDS8817NZ-G-FL

MFRonsemi

Part DescriptionN-Channel 30 V 15A (Ta) 1W (Ta) Surface Mount 8-SOIC
Datasheet
44877-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS8817NZ-G
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2400pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15A (Ta)
Maximum Drain to Source Resistance7 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge45nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge6nC