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FDS8672S
onsemi

FDS8672S

MFR #FDS8672S

FPN#FDS8672S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 18A (Ta) 8-SOIC
Datasheet
100964-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS8672S
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2670pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current18A (Ta)
Maximum Drain to Source Resistance4.8 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current80A
Maximum Total Gate Charge41nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.7nC
Typical Gate to Source Charge5.5nC