FDS86242
MFR #FDS86242
FPN#FDS86242-FL
MFRonsemi
Part DescriptionN-Channel 150 V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS86242 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 150V |
| Drive Voltage | 6V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 760pF |
| Input Capacitance Test Voltage | 75V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 4.1A (Ta) |
| Maximum Drain to Source Resistance | 67 mOhm @ 4.1A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.5W (Ta), 5W (Tc) |
| Maximum Pulse Drain Current | 20A |
| Maximum Total Gate Charge | 13nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2nC |
| Typical Gate to Source Charge | 3nC |