FDS6690A-NBNP006
MFR #FDS6690A-NBNP006
FPN#FDS6690A-NBNP006-FL
MFRonsemi
Part DescriptionSINGLE N-CHANNEL, LOGIC LEVEL, P
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDS6690A |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1205pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 11A (Ta) |
| Maximum Drain to Source Resistance | 12.5 mOhm @ 11A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 1W (Ta) |
| Maximum Pulse Drain Current | 50A |
| Maximum Total Gate Charge | 16nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 61% from Suppliers use this Dimension |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 4nC |
| Typical Gate to Source Charge | 3.4nC |