(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS4465-SN00219
onsemi

FDS4465-SN00219

MFR #FDS4465-SN00219

FPN#FDS4465-SN00219-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 20V 13.5A (Ta) Surface Mount, 8-SOIC
Datasheet
44825-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS4465
Lifecycle StatusObsolete
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance8237pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13.5A (Ta)
Maximum Drain to Source Resistance8.5 mOhm @ 13.5A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.2W (Ta)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge120nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge20nC