(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDS3580
onsemi

FDS3580

MFR #FDS3580

FPN#FDS3580-FL

MFRonsemi

Part DescriptionN-Channel 80 V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Datasheet
95404-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDS3580
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1800pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current7.6A (Ta)
Maximum Drain to Source Resistance29 mOhm @ 7.6A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.9nC
Typical Gate to Source Charge6.1nC