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FDPF20N50T
onsemi

FDPF20N50T

MFR #FDPF20N50T

FPN#FDPF20N50T-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 500V 20A (Tc) 38.5W (Tc) Through Hole, TO-220-3
Datasheet
101131-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPF20N50T
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance3120pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance230 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation38.5W (Tc)
Maximum Pulse Drain Current80A
Maximum Total Gate Charge59.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge21.6nC
Typical Gate to Source Charge14.8nC