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FDPC8016S
onsemi

FDPC8016S

MFR #FDPC8016S

FPN#FDPC8016S-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 25V 20A (Ta), 60A (Tc), 35A (Ta), 100A (Tc) 8-SON T/R
Datasheet
100735-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPC8016S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance2375pF, 6600pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Ta), 60A (Tc), 35A (Ta), 100A (Tc)
Maximum Drain to Source Resistance3.8 mOhm @ 20A, 10V, 1.4 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA, 2.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 21W (Tc), 2.3W (Ta), 42W (Tc)
Maximum Pulse Drain Current75A, 140A
Maximum Total Gate Charge35nC, 94nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC, 6.3nC
Typical Gate to Source Charge3.4nC, 10nC