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FDPC5018SG
onsemi

FDPC5018SG

MFR #FDPC5018SG

FPN#FDPC5018SG-FL

MFRonsemi

Part DescriptionMOSFET Array 30V 17A, 32A 1W, 1.1W Surface Mount, 8-PQFN
Datasheet
44786-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDPC5018SG
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1715pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current17A, 32A
Maximum Drain to Source Resistance5 mOhm @ 17A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W, 1.1W
Maximum Pulse Drain Current704A
Maximum Total Gate Charge24nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.3nC
Typical Gate to Source Charge11nC