
FDP75N08A
MFR #FDP75N08A
FPN#FDP75N08A-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 75V 75A (Tc) 137W (Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FDP75N08A | 
| Packaging Type | Tube | 
| Packaging Quantity | 1000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 75V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 4468pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 75A (Tc) | 
| Maximum Drain to Source Resistance | 11 mOhm @ 37.5A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 137W (Tc) | 
| Maximum Pulse Drain Current | 300A | 
| Maximum Total Gate Charge | 104nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-220-3 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 24nC | 
| Typical Gate to Source Charge | 20nC | 
