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FDP5N60NZ
onsemi

FDP5N60NZ

MFR #FDP5N60NZ

FPN#FDP5N60NZ-FL

MFRonsemi

Part DescriptionN-Channel 600 V 4.5A (Tc) 100W (Tc) Through Hole TO-220-3
Datasheet
44773-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP5N60NZ
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance600pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.5A (Tc)
Maximum Drain to Source Resistance2 Ohm @ 2.25A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation100W (Tc)
Maximum Pulse Drain Current18A
Maximum Total Gate Charge13nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge2.5nC