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FDP3652
onsemi

FDP3652

MFR #FDP3652

FPN#FDP3652-FL

MFRonsemi

Part DescriptionN-Channel 100 V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole TO-220-3
Datasheet
44768-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDP3652
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2880pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current9A (Ta), 61A (Tc)
Maximum Drain to Source Resistance16 mOhm @ 61A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation150W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge53nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10nC
Typical Gate to Source Charge15nC