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FDN5630
onsemi

FDN5630

MFR #FDN5630

FPN#FDN5630-FL

MFRonsemi

Part DescriptionN-Channel 60 V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Datasheet
44756-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN5630
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance560pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current1.7A (Ta)
Maximum Drain to Source Resistance100 mOhm @ 1.7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation500mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.2nC
Typical Gate to Source Charge1.6nC