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FDMS9620S
MFR #FDMS9620S
FPN#FDMS9620S-FL
MFRonsemi
Part DescriptionMosfet Array 30V 7.5A, 10A 1W Surface Mount 8-MLP (5x6), Power56
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FDMS9620S | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | 2 N-Channel | 
| Drain Source Voltage | 30V | 
| Drive Voltage | 4.5V, 10V | 
| FET Feature | Standard | 
| FET Options | N/R | 
| FET Type | Array | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 665pF, 935pF | 
| Input Capacitance Test Voltage | 15V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 7.5A (Ta), 16A (Tc), 10A (Ta), 18A (Tc) | 
| Maximum Drain to Source Resistance | 21.5 mOhm @ 7.5A, 10V, 13 mOhm @ 10A, 10V | 
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA, 3V @ 1mA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 1W (Ta) | 
| Maximum Pulse Drain Current | 60A | 
| Maximum Total Gate Charge | 14nC, 25nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | 8-MLP (5x6), Power56 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 2nC, 3.6nC | 
| Typical Gate to Source Charge | 1.7nC, 2.8nC | 
