(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMS8880
onsemi

FDMS8880

MFR #FDMS8880

FPN#FDMS8880-FL

MFRonsemi

Part DescriptionMOSFET N-CH 30V 13.5A/21A 8PQFN
Datasheet
44744-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS8880
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1585pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13.5A (Ta), 21A (Tc)
Maximum Drain to Source Resistance8.5 mOhm @ 13.5A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 42W (Tc)
Maximum Pulse Drain Current80A
Maximum Total Gate Charge33nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (4.9x5.8)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.1nC
Typical Gate to Source Charge3.5nC