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FDMS86580-F085
onsemi

FDMS86580-F085

MFR #FDMS86580-F085

FPN#FDMS86580-F085-FL

MFRonsemi

Part DescriptionN-Channel 60 V 50A (Tc) 75W (Tj) Surface Mount Power56
Datasheet
44741-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86580_F085
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1430pF
Input Capacitance Test Voltage30V
Life Cycle StatusObsolete
Maximum Continuous Drain Current50A (Tc)
Maximum Drain to Source Resistance9.6 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4.2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation75W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge30nC