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FDMS86520L
onsemi

FDMS86520L

MFR #FDMS86520L

FPN#FDMS86520L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 13.5A (Ta), 22A (Tc) 8-SON T/R
Datasheet
136966-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS86520L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4615pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current13.5A (Ta), 22A (Tc)
Maximum Drain to Source Resistance8.2 mOhm @ 13.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 69W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge63nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.7nC
Typical Gate to Source Charge9.5nC