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FDMS3672
onsemi

FDMS3672

MFR #FDMS3672

FPN#FDMS3672-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 7.4A (Ta), 22A (Tc) 8-SON T/R
Datasheet
102120-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3672
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2680pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current7.4A (Ta), 22A (Tc)
Maximum Drain to Source Resistance23 mOhm @ 7.4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating Temperature150°C
Maximum Power Dissipation2.5W (Ta), 78W (Tc)
Maximum Pulse Drain Current30A
Maximum Total Gate Charge44nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 43% from Suppliers use this Dimension
Package Type8-MLP (5x6), Power56
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge9.5nC