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FDMS3624S
onsemi

FDMS3624S

MFR #FDMS3624S

FPN#FDMS3624S-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 25V 17.5A/30A 8PQFN
Datasheet
44692-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3624S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance1570pF, 4045pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current17.5A (Ta), 30A (Tc), 30A (Ta), 60A (Tc)
Maximum Drain to Source Resistance1.8 mOhm @ 30A, 10V, 5 mOhm @ 17.5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA, 2.2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 2.5W (Ta)
Maximum Pulse Drain Current70A, 120A
Maximum Total Gate Charge26nC, 59nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC, 7.6nC
Typical Gate to Source Charge3.3nC, 8.2nC