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FDMS3606AS
onsemi

FDMS3606AS

MFR #FDMS3606AS

FPN#FDMS3606AS-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 27A 1W Surface Mount Power56
Datasheet
44687-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS3606AS
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureLogic Level Gate
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1695pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13A, 27A
Maximum Drain to Source Resistance8 mOhm @ 13A, 10V
Maximum Gate to Source Threshold Voltage2.7V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W
Maximum Pulse Drain Current100A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.7nC
Typical Gate to Source Charge3.9nC