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FDMS0312S
onsemi

FDMS0312S

MFR #FDMS0312S

FPN#FDMS0312S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 19A (Ta), 42A (Tc) 8-SON
Datasheet
130833-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMS0312S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2820pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current19A (Ta), 42A (Tc)
Maximum Drain to Source Resistance4.9 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 46W (Tc)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge6.5nC