(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDME820NZT
onsemi

FDME820NZT

MFR #FDME820NZT

FPN#FDME820NZT-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 20V 9A (Ta) 2.1W (Ta) Surface Mount, 6-UFDFN
Datasheet
100849-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDME820NZT
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance865pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Ta)
Maximum Drain to Source Resistance18 mOhm @ 9A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.1W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge8.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.2nC
Typical Gate to Source Charge1.4nC