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onsemi
FDMC86248
MFR #FDMC86248
FPN#FDMC86248-FL
MFRonsemi
Part DescriptionMOSFET N CH 150V 3.4A POWER33
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMC86248 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | 8-PQFN (3.3x3.3) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 150V |
| Drive Voltage | 6V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 525pF |
| Input Capacitance Test Voltage | 75V |
| Maximum Continuous Drain Current | 3.4A (Ta) |
| Maximum Drain to Source Resistance | 90 mOhm @ 3.4A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250mA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.3W (Ta), 36W (Tc) |
| Maximum Pulse Drain Current | 15A |
| Maximum Total Gate Charge | 9nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.7nC |
| Typical Gate to Source Charge | 1.9nC |
