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FDMC86184
onsemi

FDMC86184

MFR #FDMC86184

FPN#FDMC86184-FL

MFRonsemi

Part DescriptionMOSFET N-CH 100V 57A 8PQFN
Datasheet
165450-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC86184
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2090pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current57A (Tc)
Maximum Drain to Source Resistance8.5 mOhm @ 21A, 10V
Maximum Gate to Source Threshold Voltage4V @ 110µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation54W (Tc)
Maximum Pulse Drain Current266A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage6V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.6nC
Typical Gate to Source Charge6.5nC