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FDMC8588DC
onsemi

FDMC8588DC

MFR #FDMC8588DC

FPN#FDMC8588DC-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 25V 17A (Ta), 40A (Tc) 3W (Ta), 41W (Tc) Surface Mount, 8-PQFN
Datasheet
44643-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC8588DC
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance1695pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current17A (Ta), 40A (Tc)
Maximum Drain to Source Resistance5 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage1.8V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta), 41W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge3nC