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FDMC012N03
onsemi

FDMC012N03

MFR #FDMC012N03

FPN#FDMC012N03-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount, 8-PQFN
Datasheet
44623-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC012N03
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance8183pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta), 185A (Tc)
Maximum Drain to Source Resistance1.23 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 64W (Tc)
Maximum Pulse Drain Current688A
Maximum Total Gate Charge110nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6nC
Typical Gate to Source Charge11.5nC