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onsemi

FDMB2308PZ

MFR #FDMB2308PZ

FPN#FDMB2308PZ-FL

MFRonsemi

Part DescriptionMOSFET 2 P-Channel, Common Drain 20V 6-SON T/R
Datasheet
101047-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMB2308PZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel, Common Drain
Drain Source Voltage20V
Drive VoltageN/A
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance3030pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain CurrentN/A
Maximum Drain to Source Resistance36 mOhm @ 5.7A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW
Maximum Pulse Drain Current30A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-MLP (2x3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.7nC
Typical Gate to Source Charge3.6nC