(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMA905P
onsemi

FDMA905P

MFR #FDMA905P

FPN#FDMA905P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 10A(Ta) 2.4W(Ta) Surface Mount, 6-DFN
Datasheet
44618-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMA905P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance3405pF
Input Capacitance Test Voltage6V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Ta)
Maximum Drain to Source Resistance16 mOhm @ 10A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.4W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage6V
Minimum Junction Temperature-55°C (TJ)
Package Type6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.2nC
Typical Gate to Source Charge3.5nC