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FDMA86551L
onsemi

FDMA86551L

MFR #FDMA86551L

FPN#FDMA86551L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 7.5A (Ta) 6-SON T/R
Datasheet
101115-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMA86551L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1235pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current7.5A (Ta)
Maximum Drain to Source Resistance23 mOhm @ 7.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating Temperature150°C
Maximum Power Dissipation2.4W (Ta)
Maximum Pulse Drain Current45A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge3.8nC