(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMA3027PZ-F130
onsemi

FDMA3027PZ-F130

MFR #FDMA3027PZ-F130

FPN#FDMA3027PZ-F130-FL

MFRonsemi

Part DescriptionMOSFET 2 P-Channel Array 30V 3.3A, 6-WDFN
Datasheet
44609-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMA3027PZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±25V
Input Capacitance435pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.3A
Maximum Drain to Source Resistance87 mOhm @ 3.3A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge1nC