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FDMA1032CZ
MFR #FDMA1032CZ
FPN#FDMA1032CZ-FL
MFRonsemi
Part DescriptionMOSFET N and P-Channel 20V 3.7A (Ta), 3.1A (Ta) 6-SON
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMA1032CZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Standard |
| FET Options | Complementary |
| FET Type | Array |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 340pF, 540pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 3.7A (Ta), 3.1A (Ta) |
| Maximum Drain to Source Resistance | 68 mOhm @ 3.7A, 4.5V, 95 mOhm @ 3.1A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 700mW (Ta) |
| Maximum Pulse Drain Current | 6A |
| Maximum Total Gate Charge | 6nC, 10nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.1nC, 2.4nC |
| Typical Gate to Source Charge | 700pC, 1.1nC |