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onsemi

FDH45N50F-F133

MFR #FDH45N50F-F133

FPN#FDH45N50F-F133-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 500V 45A(Tc) 625W(Tc) Through Hole, TO-247-3
Datasheet
44597-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDH45N50F
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-3LD
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance6630pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current45A (Tc)
Maximum Drain to Source Resistance120 mOhm @ 22.5A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation625W (Tc)
Maximum Pulse Drain Current180A
Maximum Total Gate Charge137nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge45nC
Typical Gate to Source Charge33nC