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onsemi

FDG6306P

MFR #FDG6306P

FPN#FDG6306P-FL

MFRonsemi

Part DescriptionMOSFET Array 2 P-Channel 20V 600mA Surface Mount, 6-TSSOP
Datasheet
149495-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6306P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage20V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance114pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current600mA
Maximum Drain to Source Resistance420 mOhm @ 600mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW
Maximum Pulse Drain Current2A
Maximum Total Gate Charge2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge400pC
Typical Gate to Source Charge300pC