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FDG410NZ
onsemi

FDG410NZ

MFR #FDG410NZ

FPN#FDG410NZ-FL

MFRonsemi

Part DescriptionN-Channel 20 V 2.2A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
Datasheet
44580-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG410NZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance535pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance70 mOhm @ 2.2A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation420mW (Ta)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge7.2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC
Typical Gate to Source Charge600pC