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FDG332PZ

FDG332PZ

MFR #FDG332PZ

FPN#FDG332PZ-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 2.6A (Ta) 750mW (Ta) Surface Mount, 6-SSOP
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG332PZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance560pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.6A (Ta)
Maximum Drain to Source Resistance95 mOhm @ 2.6A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation480mW (Ta)
Maximum Pulse Drain Current9A
Maximum Total Gate Charge10.8nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge900pC