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FDG332PZ
MFR #FDG332PZ
FPN#FDG332PZ-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 20V 2.6A (Ta) 750mW (Ta) Surface Mount, 6-SSOP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDG332PZ |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 20V |
Drive Voltage | 1.8V, 4.5V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±8V |
Input Capacitance | 560pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 2.6A (Ta) |
Maximum Drain to Source Resistance | 95 mOhm @ 2.6A, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 480mW (Ta) |
Maximum Pulse Drain Current | 9A |
Maximum Total Gate Charge | 10.8nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
Package Type | SC-88 (SC-70-6) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 1.9nC |
Typical Gate to Source Charge | 900pC |