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onsemi

FDG315N

MFR #FDG315N

FPN#FDG315N-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 30V 2A (Ta) Surface Mount, SOT-363-6
Datasheet
44576-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG315N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance220pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2A (Ta)
Maximum Drain to Source Resistance120 mOhm @ 2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation750mW (Ta)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge4nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge700pC
Typical Gate to Source Charge800pC