FDFS6N548
MFR #FDFS6N548
FPN#FDFS6N548-FL
MFRonsemi
Part DescriptionN-Channel 30 V 7A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDFS6N548 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Schottky Diode (Isolated) |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 700pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 7A (Ta) |
| Maximum Drain to Source Resistance | 23 mOhm @ 7A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.6W (Ta) |
| Maximum Pulse Drain Current | 30A |
| Maximum Total Gate Charge | 13nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2nC |
| Typical Gate to Source Charge | 1.5nC |