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FDD6688
MFR #FDD6688
FPN#FDD6688-FL
MFRonsemi
Part DescriptionN-Channel 30 V 84A (Ta) 83W (Ta) Surface Mount TO-252AA
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD6688 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 3845pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 84A (Ta) |
| Maximum Drain to Source Resistance | 5 mOhm @ 18A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.8W (Ta) |
| Maximum Pulse Drain Current | 100A |
| Maximum Total Gate Charge | 56nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 14nC |
| Typical Gate to Source Charge | 10nC |
