(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDD6688
onsemi

FDD6688

MFR #FDD6688

FPN#FDD6688-FL

MFRonsemi

Part DescriptionN-Channel 30 V 84A (Ta) 83W (Ta) Surface Mount TO-252AA
Datasheet
44547-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD6688
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3845pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current84A (Ta)
Maximum Drain to Source Resistance5 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge10nC